Kioxia and Sandisk unveil 332-layer QLC 3D NAND with 4,800 MT/s interface

Kioxia and Sandisk unveil 332-layer QLC 3D NAND with 4,800 MT/s interface

N
News Editor
2026-08-05 00:09:52
Kioxia and Sandisk introduced their latest BiCS10 3D QLC NAND flash chip at the Future of Memory and Storage Conference on Aug. 5, describing it as the highest-density 3D NAND product that has been formally launched worldwide. The chip uses a 332-layer stack and reaches a storage density of 37 Gb/mm², with interface speeds of up to 4,800 MT/s and support for Separate Command Address, or SCA. The companies said the product is aimed at high-capacity data center SSDs. Compared with their earlier BiCS10 3D TLC NAND, which delivered storage density above 29 Gb/mm², the new QLC version pushes capacity density higher for data center storage. Industry estimates cited in the report said the chip could reach roughly 1.33 Tb under similar die size and memory cell count assumptions, though the companies have not disclosed an official capacity specification. Kioxia and Sandisk also introduced PI-LTT technology to improve high-speed signal integrity while reducing output driver power consumption. The two companies said the latest BiCS10 process could also help lower manufacturing costs after production ramps up.

Kioxia and Sandisk on Aug. 5 formally introduced their latest BiCS10 3D QLC NAND flash chip at the Future of Memory and Storage Conference, calling it the highest-density 3D NAND product that has been officially launched worldwide.

According to the companies, the chip uses a 332-layer architecture and delivers storage density of 37 Gb/mm². It also supports interface speeds of up to 4,800 MT/s and Separate Command Address, or SCA. The product is designed mainly for high-capacity data center SSDs.

Higher density than the earlier BiCS10 TLC version

The new QLC NAND raises storage capacity density for data center applications compared with the companies’ previously released BiCS10 3D TLC NAND. That earlier TLC product delivered storage density of more than 29 Gb/mm², while the newly announced QLC part reaches 37 Gb/mm².

Industry estimates cited in the report said that, under a similar chip size and memory cell count, the part could offer around 1.33 Tb of capacity. Kioxia and Sandisk have not published an official capacity specification.

PI-LTT added for performance and power efficiency

To meet data center demand for both high performance and low power use, Kioxia and Sandisk also introduced Power Isolated Low-Tapped Termination, or PI-LTT. The companies said the technology improves high-speed signal integrity while cutting output driver power consumption.

Kioxia and Sandisk added that the latest BiCS10 manufacturing process delivers higher bit density and could reduce manufacturing costs after production ramps up, supporting higher-capacity SSDs at more competitive prices.

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