Samsung Electronics and SK Hynix are accelerating their investment in high bandwidth memory, or HBM, and other next-generation memory technologies as the two South Korean chipmakers work to preserve their lead in advanced memory. According to ChainCatcher, Samsung said its second-quarter research and development spending hit a record 16 trillion won, roughly $11.6 billion. The company also said it plans to expand its lineup of high-end memory products, including HBM4, HBM4E, and DDR5. SK Hynix, meanwhile, is developing next-generation technologies such as HBM5, hybrid bonding, and iHBM. The company is expected to spend 40 trillion won, or about $32.6 billion, in capital expenditures this year. The latest figures show both companies are continuing to commit large sums to memory development and manufacturing capacity as competition around advanced chips intensifies.
Samsung Electronics and SK Hynix are accelerating their push into HBM and next-generation memory technologies to maintain their lead, according to ChainCatcher.
Samsung said its research and development spending reached a record 16 trillion won, or about $11.6 billion, in the second quarter. The company also plans to expand its portfolio of high-end memory products, including HBM4, HBM4E, and DDR5.
SK Hynix is developing next-generation technologies including HBM5, hybrid bonding, and iHBM. Its capital expenditures are expected to reach 40 trillion won, or about $32.6 billion, this year.
This article was originally published by Bit.Fan. For more cryptocurrency news and market insights, visit www.bit.fan. Disclaimer:
The market information, project data, and third-party content displayed on this platform are for industry information sharing only and do not constitute any form of investment advice or return commitment.
Cryptocurrency trading carries high risks. Users should fully assess their risk tolerance and make independent decisions. All profits, losses, and legal responsibilities are borne by the users themselves.
