Kioxia has started mass production of its 10th-generation BiCS 10 332-layer 3D NAND this year and introduced the CM10 data-center eSSD with PCIe 6.0 support. Sequential read performance is up 92% from the previous generation. The company plans to start volume production of UFS 5.0 embedded storage by the end of this year, with data transfer speeds roughly twice those of UFS 4.1, targeting on-device AI mobile devices. According to TrendForce, Kioxia held a 13.9% share of the global NAND market in the first quarter, ranking third behind Samsung Electronics at 31.6% and SK Hynix at 17.6%. Samsung, for its part, began mass producing the PCIe 6.0 eSSD PM1763 last month, built on 9th-generation V-NAND and a 4nm controller, with UFS 5.0 scheduled for fourth-quarter production. Samsung also said it started volume production of 10th-generation V-NAND, roughly 430 layers, this month, applying hybrid bonding and a triple-stack process for the first time. Industry analysts say Kioxia is competitive in technology iteration speed, though its production capacity still trails the Korean makers, and competition in the AI storage market is expected to intensify.
Kioxia has started volume production of its 10th-generation BiCS 10 332-layer 3D NAND this year, and used the new part to build the CM10, a data-center eSSD with PCIe 6.0 support. Sequential read performance is 92% higher than the previous generation.
UFS 5.0 for On-Device AI
The Japanese memory maker also plans to mass produce UFS 5.0 embedded storage by the end of the year. Data transfer speed is roughly twice that of UFS 4.1, and the parts are aimed at mobile devices running on-device AI workloads.
TrendForce data shows Kioxia held 13.9% of the global NAND market in the first quarter, ranking third behind Samsung Electronics at 31.6% and SK Hynix at 17.6%.
Samsung Pushes Back
Korean rivals are moving just as quickly. Samsung started mass producing the PCIe 6.0 eSSD PM1763 last month, built on 9th-generation V-NAND and a 4nm controller. Its UFS 5.0 line is scheduled for fourth-quarter production.
Samsung also announced that it began volume production of 10th-generation V-NAND this month, at roughly 430 layers, marking the first use of hybrid bonding and a triple-stack process.
Industry analysts say Kioxia remains competitive in the pace of technology iteration, but its production capacity still lags the Korean makers. Competition in the AI storage market is expected to intensify.
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