Samsung Electronics is working with Nvidia on an 8-layer version of seventh-generation high bandwidth memory, or HBM4E, according to Korean media cited by ChainCatcher. The reported design departs from Samsung’s earlier 12-layer and 16-layer plans by cutting stack height. Nvidia is said to have requested a speed target of 17-18Gbps, compared with 14.4Gbps for Samsung’s early HBM4E samples, a gap of roughly 20%. The product is reportedly intended for use in NVHBM. The report did not provide additional details beyond the development target, speed specification, and intended application.
Samsung Electronics is working with Nvidia (NVDA.O) on an 8-layer seventh-generation high bandwidth memory product, HBM4E, according to Korean media cited by ChainCatcher.
The reported 8-layer design would lower stack height from Samsung’s earlier 12-layer and 16-layer plans. Nvidia is said to have asked for a speed specification of 17-18Gbps, about 20% higher than the 14.4Gbps seen in Samsung’s early HBM4E samples.
The product is reportedly set to be used for NVHBM.
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