Global memory supply remains tight, with AI and cloud applications driving up demand and prices for DRAM and NAND Flash, according to ChainCatcher. The report says China’s two major memory makers, Yangtze Memory Technologies Co. (YMTC) and ChangXin Memory Technologies (CXMT), are moving beyond their traditional split focus. YMTC is preparing to enter LPDDR5 DRAM and aims to begin trial production by the end of 2026, while CXMT is reportedly pushing from DRAM into NAND Flash. Industry estimates cited in the report suggest the two companies could meet in direct competition as early as 2028. ChainCatcher also said YMTC has completed development of 294-layer 3D NAND using its Xtacking technology, and that Samsung reached a patent licensing deal with the company in 2025, with relevant patents to be used starting from the 10th-generation V-NAND. YMTC’s Phase III project is scheduled to begin production by the end of 2026 with initial DRAM capacity of about 25,000 wafers, ramping up in 2027 and targeting LPDDR5, HBM and 3D DRAM. CXMT is also said to be setting up a NAND R&D and production line in Beijing, with mass production estimated as early as 2028 to 2029.
Global memory supply remains in severe shortage, with AI and cloud applications pushing up demand and prices for DRAM and NAND Flash, according to ChainCatcher.
The report said China’s two major memory manufacturers, Yangtze Memory Technologies Co. (YMTC) and ChangXin Memory Technologies (CXMT), are moving to break the previous pattern in which each held one side of the market. YMTC is entering LPDDR5 DRAM and is expected to begin trial production by the end of 2026. CXMT, for its part, is moving from DRAM into NAND Flash.
Industry estimates cited by the report suggest the two companies could enter direct competition as early as 2028.
On the technology side, YMTC has completed development of 294-layer 3D NAND using its Xtacking technology. The report added that Samsung reached a patent licensing agreement with YMTC in 2025 and will adopt the related patents starting from its 10th-generation V-NAND.
In manufacturing plans, YMTC’s Phase III project is scheduled to start production by the end of 2026, with initial DRAM capacity of about 25,000 wafers. The company is expected to complete its ramp-up in 2027, targeting LPDDR5 while also planning later expansion into HBM and 3D DRAM.
CXMT is also reportedly setting up a NAND research, development and production line in Beijing, with mass production estimated as early as 2028 to 2029.
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