SK hynix is moving faster to raise the production share of its sixth-generation 10nm-class 1c DRAM, according to a Sept. 7 report by The Chosun Daily.
Industry data cited in the report showed the company’s 1c DRAM mix climbing from about 10% in the first quarter of this year to around 13% in the second quarter. That figure is projected to reach about 24% in the third quarter and roughly 34% in the fourth quarter. In the first quarter next year, the share could rise to about 35%, overtaking 1b DRAM at around 33% for the first time and becoming SK hynix’s main process node.
1b DRAM peaked in the second quarter
The report said 1b, SK hynix’s fifth-generation 10nm-class DRAM, peaked at about 43% of output in the second quarter before starting to decline.
At the end of the second quarter, Samsung Electronics had a 1c mix of about 16% and Micron about 19%, both above SK hynix at roughly 13%. The report added that SK hynix is accelerating the transition in the second half, and its 1c share in the fourth quarter could reach about 34%, ahead of Samsung’s roughly 31%.
1c DRAM supply began in earnest in Q2
On its second-quarter earnings call, SK hynix said supply of DRAM made on the 1c process began in earnest in the second quarter. The company said bit growth in the second half will exceed the first half as HBM4 ramps up and shipments of 1c mainstream DRAM increase.
Different timelines for HBM4 and HBM4E
Samsung Electronics is using 1c DRAM starting with HBM4, with operating speed at about 11.7Gbps. SK hynix had previously prioritized mass-production stability by relying on validated 1b DRAM and advanced MR-MUF packaging. Beginning with next-generation HBM4E, it plans to use 1c DRAM as the core chip in HBM for the first time.
HBM4 market share estimates
Counterpoint Research and others estimate that, based on the combined demand scope of Nvidia, Google and AMD this year, HBM4 market share will be in the mid-50% range for SK hynix, the upper-20% range for Samsung Electronics, and the upper-10% range for Micron.