BofA says global DRAM ASP could rise 21% in Q3, above TrendForce forecast
Bank of America Global Research said in its "Global Memory Tech" report that channel checks point to stronger-than-expected DRAM contract pricing for the third quarter. The report said newly negotiated prices are coming in above prior market expectations, with server DRAM prices rising 20% to 30% quarter over quarter, driven mainly by high-speed LPDDR5. That compares with earlier expectations for gains of no more than 20%. BofA also said spot demand has remained firm, with commodity DDR5 and legacy DDR4 prices continuing to rise month over month in July. Near-term orders for higher-priced HBM4 have increased, while the share of lower-priced HBM3E orders has declined. According to the report, DRAM sales covered by long-term supply agreements account for well below 50% of total sales, while non-LTA sales make up about 60% to 70%. Even under long-term agreements, some orders have already been set at 5% to 10% quarter-over-quarter increases. The report added that some OEMs are speeding up orders, suggesting both DRAM and NAND prices could post quarter-over-quarter gains of more than 20%. Based on that view, BofA expects global DRAM average selling prices to rise 21% in the third quarter, above TrendForce estimates of 13% to 18% for conventional DRAM and 8% to 13% when HBM is included.








