Korean industry assessment says China’s memory chip gap has narrowed to about 1 year in NAND and 2 years in DRAM
A new assessment from the Korea Semiconductor Industry Association says the technology gap between Chinese memory makers and leading global suppliers has narrowed much faster than previously believed. According to the evaluation, Yangtze Memory Technologies Co. (YMTC) trails top players by about one year in NAND flash, while ChangXin Memory Technologies (CXMT) is roughly two years behind in DRAM and about three years behind in high-bandwidth memory, or HBM. The report says the gap had widely been viewed as around five years not long ago. The article, citing JoongAng Ilbo and the Korean industry group, also lays out a series of product and capacity milestones. It says Samsung Electronics and SK hynix began producing 300-layer NAND in 2025 while YMTC was at 270 layers, and that YMTC is expected to move to 400-layer NAND by 2027. In DRAM, Samsung and SK hynix started DDR5 production in 2023, while CXMT began DDR5 memory module production in 2025. The report adds that CXMT has already started mass production of LPDDR5X and has just begun producing LPDDR6. On HBM, the piece says CXMT has started trial production of HBM3E modules with yields of about 25%, while continuing to work through TSV-related manufacturing challenges. It also says both CXMT and YMTC may be pursuing competitive architectures without relying on EUV lithography, even as domestic DUV tool makers still face bottlenecks in projection lenses and light sources.








